In this age of proliferation of technology and information, semiconductors are a cornerstone which acts as a data-processing aspect for any device, ranging from a smartphone to a spacecraft. The semiconductor industry is currently growing at a fast rate due to several advancements in the integrated circuits, such as improvements in reliability, power consumption, cost, and system size. These integrated circuits in any device comprise numerous transistors to control the overall flow of power in a binary form.
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Semiconductors have significantly evolved over the years in various applications, such as automotive, manufacturing, and consumer electronics, primarily in terms of considerable improvement in performance, integration density, cost reduction, and reliability. In particular, the Internet of Things (IoT) and the widespread acceptance of connected ecosystems have effectively revolutionized industries such as automotive, infrastructure, agriculture, healthcare, and electronics, and semiconductor. The gradually increasing demand for a connected ecosystem has led to a larger integration of semiconductors in everyday devices/objects such as lamp posts, automobiles, and smart wearables, among others.
The global FinFET technology market has been categorized into six key product categories, namely system-on-chip (SoC), central processing unit (CPU), field-programmable gate array (FPGA), graphics processing unit (GPU), micro control unit (MCU), and network processors. Metal oxide semiconductor field-effect transistor (MOSFET) is the primary element used for fabricating integrated circuits (ICs). Advantages such as easy prototyping, low-cost scaling, and maximum reliability, among others, have made MOSFET dominant in digital circuits and system-on-chip (SoC) integrated substrate system. Since the introduction of MOSFETs in 1959 for fabricating ICs, the channel length of the device is made to shrink for producing faster and compact devices. The reducing channel length also ensures a decrease in the thickness of the silicon dioxide gate. A reduction in gate thickness further helps in increasing the gate capacitance for driving the current, and thereby, improves the device performance.
Owing to short channel effects such as surface scattering, drain-induced barrier lowering, velocity saturation, impact ionization, and hot electron effect, the scaling of devices beyond 20nm is not possible with 2D planar or MOSFET structure as it results in an increase of gate leakage and sub-threshold leakage in the device. The enhancements and improvements in scaling technology have demanded low power-based circuits, thereby giving rise to fin field-effect transistor (FinFET) process technology.
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The global FinFET technology market has witnessed numerous significant developments by different market players to attain their respective market shares in this emerging domain. The strategies employed to gain a significant market share in this growing industry have been varying from partnerships, contracts, joint ventures, and collaborations. This segment provides comprehensive insights regarding the different market developmental activities adopted by the key players in the industry to compete directly.
UPCOMING INDUSTRY TRENDS 